Author Affiliations
Abstract
1 State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
2 College of Communication Engineering, Jilin University, Changchun 130012, China
3 State Key Laboratory of Supramolecular Structure and Materials, Institute of Theoretical Chemistry, Jilin University, Changchun 130012, China
4 College of Information Technology, Jilin Agricultural University, Changchun 130118, China
In this Letter, we have demonstrated significant electric field induced (EFI) optical rectification (OR) effects existing in the surface layers of germanium (Ge) and measured the distributions of EFI OR signals along the normal directions of surface layers of Ge samples. Based on the experimental results, the ratios of the two effective second-order susceptibility components χzzz(2eff)/χzxx(2eff) for Ge(001), Ge(110), and Ge(111) surface layers can be estimated to be about 0.92, 0.91, and 1.07, respectively. The results indicate that the EFI OR can be used for analyzing the properties on surface layers of Ge, which has potential applications in Ge photonics and optoelectronics.
240.4350 Nonlinear optics at surfaces 190.4350 Nonlinear optics at surfaces Chinese Optics Letters
2018, 16(10): 102401
Author Affiliations
Abstract
1 State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
2 College of Communication Engineering, Jilin University, Changchun 130012, China
3 College of Information Technology, Jilin Agricultural University, Changchun 130118, China
4 State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
The depth profile of electric-field-induced (EFI) optical rectification (OR) and EFI Pockels effect (PE) in a Si(110) crystal are investigated. The results show that EFI OR and PE signals are very sensitive to the electric field strength in the surface layers of the Si crystal. Theoretical formulas that include the electric field parameters and the widths of the space-charge region are presented and agreed very well with the experimental results. The experiments and simulations indicate that EFI OR and PE are potential methods for researching the surface/interface properties along the depth direction in centrosymmetric crystals such as Si.
240.4350 Nonlinear optics at surfaces 190.4350 Nonlinear optics at surfaces 190.4720 Optical nonlinearities of condensed matter Chinese Optics Letters
2017, 15(6): 062401
Author Affiliations
Abstract
1 State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
2 College of Communication Engineering, Jilin University, Changchun 130012, China
3 College of Information Technology, Jilin Agricultural University, Changchun 130118, China
4 Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, China
Pockel’s effect and optical rectification induced by the built-in electric field in the space charge region of a silicon surface layer are demonstrated in a {001}-cut high-resistance silicon crystal. The half-wave voltage is about 203 V, deduced by Pockel’s effect. The ratio χzxx(2)/χzzz(2) is calculated to be about 0.942 according to optical rectification. Our comparison with the Kerr signal shows that Pockel’s signal is much stronger. This indicates that these effects are so considerable that they should be taken into account when designing silicon-based photonic devices.
230.2090 Electro-optical devices 190.4350 Nonlinear optics at surfaces Chinese Optics Letters
2016, 14(1): 012301
Author Affiliations
Abstract
The nonlinear photoresponse to a 1.56-\mu m infrared continuous wave laser in semi-insulating (SI) galliumarsenide (GaAs) is examined. The double-frequency absorption (DFA) is responsible for the nonlinear photoresponse based on the quadratic dependence of the photocurrent separately on the coupled optical power and bias voltage. The electric field-induced DFA remarkably affects the native DFA in SI GaAs. The surface electric field or the surface band-bending of SI GaAs significantly affects the magnitude variation of the photocurrent and dark current.
250.4390 Nonlinear optics, integrated optics 250.0040 Detectors 190.4400 Nonlinear optics, materials 190.4350 Nonlinear optics at surfaces Chinese Optics Letters
2013, 11(11): 112501
